| 1. | Research progress in electrical properties of high - k hfo2 gate dielectric films
2栅介质材料电学特性的研究进展 |
| 2. | Solving process of trap density and extracting of correlative parameters in thin gate dielectric
薄栅介质陷阱密度的求解和相关参数的提取 |
| 3. | This dissertation presents a new characterization method of ultra - thin gate dielectric tddb
本文提出了超薄栅介质tddb效应的表征新方法。 |
| 4. | In order to resolve the questions , a new high k material is developed instead of the traditional sio2 gate dielectric material to reduce the tunneling current
目前，正在利用介电常数较大的材料来代替传统的sio _ 2作为栅介材料，来减少隧穿电流。 |
| 5. | The multi - layer model algorithm not only calculates the thickness of gate dielectric but also validates whether the model is proper . it has high practical merit to analyze the structure of gate dielectric
这种算法和软件的实现对于mos栅介质层的结构分析有很高的实用价值，对于微电子器件的结构研究有一定的推动作用。 |
| 6. | Internal field generated by contact potential of gate electrode and substrate is considered to be responsible for the enhancement of c - v hysteresis . we first incorporate e - beam evaporation of hf with post thermal oxidation to fabricate hfo2 for the application of gate dielectrics
硅化物主要是由沉积过微溯博士裕文搏要程中hf和出的互扩散引起的，而热氧化可以将其转化成具有较高介电常数的硅氧化物hfxsiyo 。 |
| 7. | Second , as an electronic thin film , tio _ ( 2 ) thin film has good insulatibity to be used as protection layers of large - scale integrated circuit ( lsi ) , and tio2 thin film also has high dielectric constant , which can be applied to gate dielectric of semiconductor device , mems and mos
作为电学膜， tio _ 2薄膜的绝缘性能好，可作为大规模集成电路的保护层。 tio _ 2的介电常数很高，可用于半导体器件mems 、 mos等的栅介质。 |
| 8. | The la2o3 material was paid attention because of its good gate dielectric properties , but there are a lot of properties are under research , the most important property is thermal stability . to improve the situation the author has made the following research and achieved beneficial results
La _ 2o _ 3是一种新型的高介电常数的栅介材料，它的优良性能引起了微电子界的注意，但它的很多特性还有待于研究，其中最重要的是它的热稳定性和隧道电流。 |
| 9. | With the research on hfoxny gate dielectrics , it can reduces leakage current and increase crystallizing point ; our research can help to realize the leakage current mechanism and silc effect of hfo2 , futher more it can offer us direction on optimize the fabrication process
结果表明，与hfo :相比，氮化的hfo :具有小的漏电流。我们的研究结果有助于进一步了解hro :栅介质的泄漏电流机制和silc效应的特征，为进一步优化hfo :高k栅介质的制备工艺提供指导。 |
| 10. | Since metal - oxide - semiconductor ( mos ) device appeared , integration of integrated circuit ( ic ) expands as moore law . meanwhile the dimension of device scales down , the thickness of sio2 gate dielectric shrinks as the same law . but as the thickness of sio2 gate dielectric reaches at isa , the gate current rises very quickly and reaches at 1 10a / cm2
自从金属-氧化物-半导体( mos )器件出现以来，集成电路的集成度按照摩尔定律增加，相应地，器件的物理尺寸按照等比缩小的原则不断缩小， sio _ 2作为栅介质的厚度不断缩小，特征尺寸在0 . 1 m以下的集成电路要求sio _ 2栅介质的厚度小于1 . 7nm 。 |
